Micro-lithography Systems

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  • High-Precision Grayscale Lithography Systems for Micro-Optics & More

    • Minimum Feature Size: 500 nm
    • Write Modes: Five options with variable write speeds and resolutions
    • Max Substrate Size: DWL 2000 GS: 200 x 200 mm², DWL 4000 GS: 400 x 400 mm²
    • Exposure Speed: Up to 1000 mm²/min in grayscale mode
    • Automation Ready: Loading system, carrier station, pre-aligner & scanner options available

     

  • Ultimate Laser Lithography Tool for Research & Prototyping

    • High-Resolution Patterning: Minimum feature size down to 300 nm, outperforming traditional optical lithography.
    • Grayscale Lithography: Supports up to 1024 gray levels for 2.5D topographies (e.g., diffractive optics, micro-optics, holograms).
    • Precision Alignment:
      • Frontside Alignment Accuracy: 250 nm
      • Backside Alignment Accuracy (Optional): 1000 nm
      • 2nd Layer Overlay Accuracy: 350 nm (with High-Accuracy Option)
    • Versatile Substrate Compatibility: Supports substrates from 5 mm to 230 mm, with thickness up to 12 mm.
    • Flexible Laser Options: Choose between 405 nm (broadband resists) and 375 nm (SU-8 & i-line resists).
    • Automated Loading System (Optional): Enables high-precision wafer handling, supporting masks up to 7” and wafers up to 8”.

     

  • High-Speed Maskless Lithography for R&D & Rapid Prototyping

    • Fastest Maskless Lithography System: 150 mm wafer exposed in under 16 minutes.
    • High-Resolution Patterning:
      • Edge roughness: 60 nm
      • CD uniformity: 100 nm
      • 40 nm address grid
    • Flexible Write Modes:
      • High-Resolution Mode: 500 nm lines & spaces (375 nm wavelength).
      • High-Aspect Ratio Mode: Up to 1:20 aspect ratio, ideal for microfluidics and MEMS
    • Scalable & Modular:
      • Exposure area upgradable from 150 x 150 mm² to 200 x 200 mm².
      • Substrate sizes range from 3” to 6” (up to 8” on request).
    • Energy-Efficient & Long-Lasting:
      • Solid-state laser light sources with 10-20 year lifespan.
      • Low operational and maintenance costs.
    • Seamless Integration in Multi-User Facilities:
      • Less than 1-hour training required for full user qualification.
      • Automatic front & backside alignment with real-time autofocus.
  • High-Speed Maskless Lithography for Industrial Volume Production

    • High-Throughput Industrial Production: Supports wafers up to 300 x 300 mm² with sub-micron precision.
    • 1.5 µm Minimum Feature Size: Offers high resolution and uniformity for demanding applications.
    • Dynamic Autofocus & Distortion Correction: Ensures perfect patterning even on warped or corrugated substrates.
    • Full Automation & MES Integration: Seamless connection with SECS/GEM and OPC-UA protocols.
    •  Flexible Write Modes:
      • Standard Write Mode: 1.5 µm resolution for fine-feature lithography.
      • High-Throughput Mode: 3 µm resolution for faster exposure and mass production.
    • Eliminates Mask-Related Costs: Faster turnaround time and higher design flexibility.

     

  • High-Resolution, Modular Nanolithography Tool for Advanced Research

    • High-Resolution Nanopatterning: 15 nm lateral features, <2 nm vertical resolution.
    • Markerless Overlay & Stitching: 25 nm alignment accuracy without markers.
    • Damage-Free Lithography: No charged particles or proximity effects, ensuring clean lift-off and etching compatibility.
    • Hybrid t-SPL & DLS Lithography: Fast large-area patterning with laser sublimation (DLS) and high-resolution nanoscale writing with t-SPL.
    • Parallel Writing with Decapede Module: 10 cantilevers for increased throughput while maintaining high resolution.
    • Automated Workflow & Scripting: Python-based automation, real-time imaging, and closed-loop corrections.
    • Versatile Process Compatibility: Works with standard pattern transfer methods, including lift-off, etching, and molding.

     

  • High-Resolution Maskless Direct Imager for R&D & Prototyping

    • Maskless Direct Imaging: Write high-resolution microstructures in i-line resists without requiring photomasks.
    • Ultra-High-Speed Exposure: 100 x 100 mm² exposure in just 9 minutes.
    • Exceptional Resolution & Accuracy:
      • Minimum feature size: 500 nm
      • Edge roughness: < 40 nm
      • CD uniformity: < 60 nm
      • Alignment accuracy: Topside: 100 nm | Backside VIS/IR: ±1 µm
    • Advanced Calibration & Autofocus:
      • Real-time optical & pneumatic autofocus with 80 µm dynamic compensation.
      • Integrated metrology functions for positioning, CD uniformity, and edge roughness monitoring.
    • Multi-Mode Write System: Choose from two write modes:
      • High NA Mode: Maximum resolution for ultra-fine microstructures.
      • Lower NA Mode: Optimized for throughput and depth-of-focus (DOF) critical applications.
    • Scalable & Flexible:
      • Maximum exposure area: 300 x 300 mm².
      • Compatible with wafers up to 300 mm in size.

     

  • Compact Maskless Lithography System for High-Precision Microstructuring

    • High-Resolution Maskless Lithography: No mask required—direct-write exposure ensures efficient and cost-effective fabrication.
    • Flexible Exposure Modes:
      • Raster Scan Mode: Consistent high-speed writing regardless of pattern density.
      • Vector Scan Mode: Ideal for curved structures, delivering smooth, continuous lines.
    • Compact & Small Footprint: 25″ x 33″ x 21″ (640 mm x 840 mm x 530 mm) – fits on a standard lab workbench.
    • Fast Exposure Speeds: A 4″ wafer can be exposed in just 90 minutes.
    • Advanced Optical Configurations: Min. resolution of 0.6 µm, 1 µm, and 3 µm, with variable resolution options.
    • High-Precision Alignment:
      • Edge roughness: Raster mode: 100 nm, Vector mode: 30 nm
      • CD uniformity: 200 nm
    • Upgradable Exposure Area: Expand from 100 x 100 mm² to 150 x 150 mm².
    • Glovebox Integration: Compatible for patterning sensitive materials in controlled environments.

Showing all 7 results