PHI Quantes Scanning XPS/HAXPES Microprobe

Introducing the PHI Quantes Scanning XPS/HAXPES Microprobe

The PHI Quantes is the only commercially available automated, high-throughput lab-based HAXPES spectrometer. It is a unique scanning X-ray photoelectron microprobe that combines a high energy (HAXPES) monochromatic X-ray source (Chromium Kα) with a conventional monochromatic soft X-ray source (Aluminum Kα). Both sources are high flux focused X-ray beams that can be scanned across the sample surface and can be used to define analysis points, areas, lines, and maps with 100% confidence.

The analytical information depth using the Cr X-ray source is about 3 times deeper than with the Al X-ray source. This opens opportunities for probing thicker film structures and buried interfaces, as well as minimizing the effects of surface contamination and ion-induced chemical damage during depth profiling.

Bring HAXPES synchrotron capabilities into your lab with the PHI Quantes!

Key Features

• Automated high-throughput lab-based Hard/Soft X-ray Photoelectron Spectroscopy System
• XPS/HAXPES microprobe with ≤ 7.5 µm spatial resolution for Al X-rays and < 14 µm for Cr X-rays
• High sensitivity electrostatic detection optics
• Dual beam charge neutralization
• Robotic sample handling
• Automated 5-axis stage
• Two internal sample parking stations
• Accepts samples up to 100 mm diameter and 25 mm thick
• High performance floating column Ar ion gun
• High speed snapshot depth profiling mode
• Multipoint depth profiling within a single crater
• Quantitative chemical state mapping

Optional Features

• Sample Positioning Station
• Dedicated turbopump for Ar ion gun
• Hot/Cold introduction and stage
• Ambient or hot/cold special platen with extra electrical contacts for in-situ electrochemical experiments
• Auxiliary chamber for sample transfer to/from external instruments and glove boxes 
• Dual in situ monoatomic/GCIB sputtering gun with gas cluster measurement and tuning tool
• Glove box adapter for introduction chamber
• Automated angle dependent profiles

Key Benefits

The Cr X-ray source has a photon energy of 5414.7 eV and provides for depths of analysis roughly 3 times those obtained using an Al X-ray source. This allows for:

Decreased effect of chemical state damage induced by ion sputtering

• Using the Cr X-ray source, quantitative depth profiles can be reliably obtained from ion-beam sensitive materials.
• Deeper sampling depth using the Cr source allows one to probe beyond the depth of possible damage induced by ion sputtering.
• A combination of Al and Cr data in depth profiles provides information on the extent of the damage.
• Reduced effect of surface contamination
  An example of reduced sensitivity of Cr-based spectral data to adventitious contamination is demonstrated in the Figure below where two surveys from a contaminated vanadium substrate are overlaid. The zoom-in into the C 1s binding energy region shows a much higher relative intensity in the Al X-ray data source vs the Cr X-ray survey.

Benefits of Lab-based HAXPES over Synchrotron HAXPES

• Efficient charge neutralization for insulating and semiconducting samples
• Fast screening tool for experiment development before time and cost intensive synchrotron beam line testing
• Fully versatile automation of switching between Al and Cr sources (approximately 1 minute switchover time) and robust X-ray spectrometer using both soft and hard X-ray sources
• High throughput spectrometer with all data acquisition capabilities for both X-ray sources
• Full automation of sample manipulation and data acquisition
• Large sample mount with 2 additional parking positions

Specifications